英特尔和美光最近宣布一种新的非易失存储器3D XPoint,宣称比NAND Flash快1000倍,持久1000倍,与dram的差距在一个数量及以内,并且成本可能介于nand和dram之间。 官网链接 http://newsroom.intel.com/community/intel_newsroom/blog/2015/07/28/intel-and-micron-produce-breakthrough-memory-technology
slashdot上的讨论 http://hardware.slashdot.org/story/15/07/28/1830202/intel-and-micron-unveil-3d-xpoint-memory-1000x-speed-and-endurance-over-flash
靠谱吗?